Director of CIACyT/UASLP, Autonomous University of San Luis Potosí/CIACyT, Mexico
Dr. Miguel Ángel Vidal Borbolla is the Director of CIACyT at Universidad Autónoma de San Luis Potosí. A physicist and electrical engineer by training, he has an extensive career in semiconductor research, renewable energies, and nanoscience. He has published nearly 100 scientific papers and guided numerous graduate students. His work has contributed to major advancements in optoelectronics and semiconductor technology.
Profile
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Education 🎓
Dr. Vidal Borbolla holds a Bachelor’s and Master’s degree in Physics and Mathematics from the Escuela Superior de Física y Matemáticas, Mexico City. He earned his Ph.D. in Electrical Engineering from CINVESTAV, completing part of his research at the Tokyo Institute of Technology, focusing on the development of solar cells.
Experience 💼
Dr. Vidal has held various leadership positions in academia, including laboratory and department head roles. He is currently the Director of CIACyT, leading over 70 researchers across multidisciplinary groups. He has also been a scientific manager for numerous high-budget research projects.
Research Interest 🔬
His research primarily focuses on semiconductors, optoelectronics, nanoscience, and renewable energies. Notable contributions include the development of cubic phase-grown InGaN alloys and pioneering work in far-infrared detectors using GeSn semiconductors.
Awards 🏆
Dr. Vidal’s research has been widely recognized, including his work on nanomaterials published in the Journal of Applied Physics, which received acclaim for its innovation in atomic monolayers. His numerous scientific contributions have earned him a strong citation record and leadership in key research projects.
Publications Top Notes 📚
Vidal M.A. et al., Crystals, 2024. Review of GaN, InN Alloys Obtained in Cubic Phase – Cited by: 14
Vidal M.A. et al., Journal of Applied Physics, 2024. An Innovative Approach to Control Hf/Ti Ratio in Monolayers – Cited by: 10
Vidal M.A. et al., Carbon, 2010. Liquid Crystal Behavior of Single Wall Carbon Nanotubes – Cited by: 78
Vidal M.A. et al., Applied Physics Letters, 2017. Growth of HfO2/TiO2 Nanolaminates by Atomic Layer Deposition – Cited by: 32
Vidal M.A. et al., Journal of Crystal Growth, 2011. Synthesis of Nitride-Based Semiconductor Alloys – Cited by: 25
Conclusion
In conclusion, Dr. Miguel Ángel Vidal Borbolla is a strong candidate for the Best Researcher Award due to his substantial contributions to semiconductor research, his leadership role, and his dedication to fostering scientific innovation. By addressing some areas, such as increasing the global impact of his work, he could further solidify his standing as a leading figure in his field.